unisonic technologies co., ltd ut50n03 power mosfet www.unisonic.com.tw 1 of 6 copyright ? 2011 unisonic technologies co., ltd qw-r502-168.b 45a, 25v n-channel power mosfet ? features * r ds(on) = 14m ? @v gs = 10 v * low capacitance * optimized gate charge * fast switching capability * avalanche energy specified ? symbol 1.gate 3.source 2.drain to-252 1 1 to-251 ? ordering information ordering number pin assignment lead free halogen free package 1 2 3 packing ut50n03l-tm3-t UT50N03G-TM3-T to-251 g d s tube ut50n03l-tn3-r ut50n03g-tn3-r to-252 g d s tape reel ut50n03l-tn3-t ut50n03g-tn3-t to-252 g d s tube note: pin assignment: g: gate d: drain s: source
ut50n03 power mosfet unisonic technologies co., ltd 2 of 6 www.unisonic.com.tw qw-r502-168.b ? absolute maximum ratings (t j = 25 , unless otherwise specified) parameter symbol ratings unit drain-source voltage v dss 25 v gate-source voltage v gss 20 v continuous drain current i d 45 a pulsed drain current (note 3) i dm 180 a single pulsed avalanche energy (note 4) e as 20 mj power dissipation p d 50 w junction temperature t j +150 c storage temperature t stg -55 ~ +150 c notes: 1. absolute maximum ratings are those values beyond which the device could be permanently damaged. absolute maximum ratings are stress ratings only and functional device oper ation is not implied. 2. l = 19.5mh, i as = 6.3a, v dd = 50v, r g = 25 ? , starting t j = 25c 3. surface-mounted on fr4 board using 1 sq in pad, 1 oz cu. ? thermal data parameter symbol ratings unit junction to ambient (note 3) ja 71.4 /w junction to case jc 3.0 /w
ut50n03 power mosfet unisonic technologies co., ltd 3 of 6 www.unisonic.com.tw qw-r502-168.b ? electrical characteristics (t j =25c, unless otherwise specified) parameter symbol test conditions min typ max unit off characteristics drain-source breakdown voltage bv dss v gs =0v, i d =250 a 25 v drain-source leakage current i dss v ds =20v, v gs =0v 1.5 a gate-source leakage current i gss v ds =0v, v gs = 20v 100 na on characteristics gate-threshold voltage v gs(th) v ds =v gs , i d =250 a 1.0 1.7 2.0 v i d = 30 a 12 v gs = 11.5v i d = 15 a 11.7 v gs = 10 v i d = 30 a 12.5 14 i d = 30 a 21 drain-source on-state resistance r ds(on) v gs = 4.5v i d = 15 a 19 23 m ? dynamic parameters input capacitance c iss 610 750 output capacitance c oss 300 reverse transfer capacitance c rss v ds =12v, v gs =0v, f=1mhz 125 pf switching parameters turn-on delay time t d(on) 8.2 turn-on rise time t r 9.6 turn-off delay time t d(off) 11.2 turn-off fall-time t f v gs = 4.5 v, v ds =15 v, i d = 30 a, r g = 3.0 6.8 ns turn-on delay time t d(on) 5.0 turn-on rise time t r 84 turn-off delay time t d(off) 15 turn-off fall-time t f v gs = 11.5 v, v ds =15 v, i d = 30 a, r g = 3.0 4.0 ns total gate charge q g 6.0 10 gate-to-source charge q gs 1.9 gate-to-drain charge q gd v ds =15v,v gs =4.5v, i d =30 a 3.7 nc total gate charge q g 15 gate-to-source charge q gs 1.9 gate-to-drain charge q gd v ds =15v,v gs =11.5v, i d =30 a 3.9 nc source- drain diode ratings and characteristics drain-source diode forward voltage v sd i s =30 a, v gs =0v 0.85 1.1 v maximum continuous drain-source diode forward current i s 45 a reverse recovery time t rr 24 ns reverse recovery charge q rr i s = 30 a, v gs = 0 v, di /dt = 100 a/ s 14 nc note: 1. pulse width limited by t j(max) 2. pulse test: pulse width 300s, duty cycle 2%.
ut50n03 power mosfet unisonic technologies co., ltd 4 of 6 www.unisonic.com.tw qw-r502-168.b ? typical characteristics drain current,i d (a) drain current,i d (a) i d =15a t j =25 0.065 0.055 0.045 0.035 0.025 0.015 0.005 10 9 8 7 6 5 4 3 2 gate-to-source voltage,v gs (v) drain-to-source resistance,r ds(on) ( ) on-resistance versus gate-to- source voltage v gs =4.5v v gs =10v t j =25 10 20 30 40 50 drain current,i d (a) 0.030 0.025 0.020 0.015 0.010 0.005 0 on-resistance versus drain current and gate voltage drain-to-source resistance,r ds(on) ( ) capacitance,c (pf) leakage,i dss (na)
ut50n03 power mosfet unisonic technologies co., ltd 5 of 6 www.unisonic.com.tw qw-r502-168.b ? typical characteristics(cont.) s o u r c e c u r r e n t , i s ( a ) t , t i m e ( n s ) drain current,i d (a) g a t e - t o - s o u r c e v o l t a g e , v g s ( v ) drain-to-source voltage,v ds (v) e f f e c t i v e t r a n s i e n t t h e r m a l r e s i s t a n c e ( n o r m a l i z e d ) , r ( t )
ut50n03 power mosfet unisonic technologies co., ltd 6 of 6 www.unisonic.com.tw qw-r502-168.b utc assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all utc products described or contained herein. utc products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. reproduction in whole or in part is prohibited without the prior writ ten consent of the copyright owner. the information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.
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